Round 10: Tossup 14
Optimal pressures for this process can be determined using Brewster angle microscopy. Fine-tuning for one type of this process can be done using RHEED (“reed”) systems centered on an electron gun. Instabilities during this process can arise from misfit strain in the Stranski–Krastanov model of “island” coalescence. Liquified petroleum gas and copper foils are used to produce graphene in one form of this process. Material formed by this process can be removed by reactive ion etching. This process is done epitaxially with gallium and arsenic molecular beams in MOSFET (“moss-fet”) production. The chemical and physical vapor types of this process are used to generate thin films for semiconductor wafers. For 10 points, name this process of transferring gas particles onto a solid surface, the opposite of sublimation. ■END■
ANSWER: deposition [or word forms; accept thin film deposition or monolayer deposition or nanoparticle deposition; accept chemical vapor deposition or CVD; accept physical vapor deposition or PVD; accept molecular beam epitaxy or MBE until read; accept adsorption; accept thin film coating; accept epitaxial growth; prompt on thin film formation or monolayer formation; prompt on layering; prompt on nucleation; prompt on photolithography; prompt on semiconductor fabrication]
<AL, Chemistry> | Packet J - Southampton A, Indiana A, Illinois B, Edinburgh A
= Average correct buzzpoint
Back to tossups